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| SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. KRX103E EPITAXIAL PLANAR NPN/PNP TRANSISTOR B FEATURES Including two devices in TESV. With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. A1 A C B1 (Thin Extreme Super mini type with 5 pin.) 1 5 DIM A A1 B 2 3 4 B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2+ 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C EQUIVALENT CIRCUIT Q1 R1 OUT Q2 R1 OUT Q1 , Q 2 R1=22K R2=22K H P P IN IN R2 COMMON R2 COMMON 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 1 Q2 COMMON (EMITTER) IN (BASE) COMMON (EMITTER) OUT (COLLECTOR) OUT (COLLECTOR) IN (BASE) TESV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Marking 5 J D Type Name 4 Q1 Q2 BB 1 2 3 1 2 3 Q1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING 50 40, -10 100 UNIT V V Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Output Voltage Input Voltage Output Current ) SYMBOL VO VI IO RATING -50 -40, 10 -100 UNIT V V Q1, Q2 MAXIMUM RATING (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. ) SYMBOL PD * Tj Tstg RATING 200 150 -55 150 UNIT 2002. 1. 24 Revision No : 1 1/3 KRX103E Q1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=50V, VI=0 VO=5V, IO=10 IO=10 , II=0.5 VO=0.2V, IO=5 VO=5V, IO=0.1 VO=10V, IO=5 VI=5V MIN. 70 1.0 TYP. 120 0.1 2.1 1.2 200 MAX. 500 0.3 3.0 0.36 V V V UNIT. Note : * Characteristic of Transistor Only. Q2 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Output Cut-off Current DC Current Gain Output Voltage Input Voltage (ON) Input Voltage (OFF) Transition Frequency Input Current SYMBOL IO(OFF) GI VO(ON) VI(ON) VI(OFF) fT * II ) TEST CONDITION VO=-50V, VI=0 VO=-5V, IO=-10 IO=-10 , II=-0.5 VO=-0.2V, IO=-5 VO=-5V, IO=-0.1 VO=-10V, IO=-5 VI=-5V MIN. 70 -1.0 TYP. 120 -0.1 -2.1 -1.2 200 MAX. -500 -0.3 -3.0 -0.36 V V V UNIT. Note : * Characteristic of Transistor Only. 2002. 1. 24 Revision No : 1 2/3 KRX103E 100 OUTPUT CURRENT I O (mA) 50 30 10 5 3 1 0.5 0.3 Q1 VO =0.2V I O - V I(ON) -100 OUTPUT CURRENT I O (mA) -50 -30 -10 Q2 VO =-0.2V I O - V I(ON) 100 C Ta= Ta=25 C Ta=-25 C Ta=100 C -5 -3 -1 -0.5 -0.3 -0.1 -0.3 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 100 -1 -3 -10 -30 -100 INPUT ON VOLTAGE V I(ON) (V) INPUT ON VOLTAGE V I(ON) (V) 10k OUTPUT CURRENT IO (A) 5k 3k 1k Q1 I O - V I(OFF) OUTPUT CURRENT IO (A) VO =5V -10k -5k -3k -1k -500 -300 -100 -50 -30 Q2 VO =-5V I O - V I(OFF) 25 C Ta= Ta= 25 C Ta= 500 300 100 50 30 0.6 C 100 -25 C C 100 Ta= Ta= 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -0.8 -1.0 -1.2 -1.4 Ta= -25 C -1.6 -1.8 -2.0 INPUT OFF VOLTAGE VI(OFF) (V) INPUT OFF VOLTAGE VI(OFF) (V) 300 DC CURRENT GAIN G I Q1 G I - IO 500 Ta=100 C Q2 VO =-5V G I - IO 300 DC CURRENT GAIN G I Ta=25 C Ta=-25 C 100 50 30 Ta=100 C Ta=25 C 100 50 30 Ta=-25 C 10 VO =5V 5 0.5 1 3 10 30 100 OUTPUT CURRENT I O (mA) 10 -1 -3 -10 -30 -100 OUTPUT CURRENT I O (mA) 2002. 1. 24 Revision No : 1 3/3 |
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